| Mfg Part Number: CY6116-55LMB | Alternate P/N: CY611655LMB | NSN : 5962-01-302-0502 |
| NIIN : 013020502 | CAGE Code : 65786 | Manufacturer: Cypress Semiconductor Inc |
| Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
Thank you for your continued interest in the various parts and components currently available on The NSN Mart. Here, our customers will find our NSN RFQ Page for Microcircuit Memory parts with the NSN 5962-01-302-0502, among others from the manufacturer Cypress Semiconductor Inc. For particular equipment such as part number CY6116-55LMB, the submission of a completed RFQ form will provide customers with a quote on any desired part in just 15 minutes or less. Upon receival, our expert market representatives will use your offered information to construct a quote paramount to your operations with rapid turnaround times and cost savings at our forefront.
As our robust supply chain stretches across the United States, we are able to supply entities facing Aircraft on Ground (AOG) delays, or other unique time constraints, with expedited shipping on select NSN 5962-01-302-0502 items for immediate procurement. Operating as an AS9120B, ISO 9001:2015, and FAA AC 00-56B accredited enterprise, products listed on our database are upheld to rigorous quality assurance testing, inspection, and cross-referencing before shipment. Functioning as the only independent distributor with a NO CHINA SOURCING pledge, you can depend on The NSN Mart for authentic items like those listed alongside the CAGE Code 65786 by Cypress Semiconductor Inc.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-302-0502 Item Description: Microcircuit Memory | 5962 | 013020502 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Cy6116-55lmb | 5 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 060 INCHES MINIMUM AND 0 100 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-55 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND WENABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | CRHL | BIT QUANTITY16384 |
| MEMORY | CSWJ | WORD QUANTITY2048 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORC-4 MIL-M-38510 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 LEADLESS |
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